Technical specification
Epitaxial structures:
| Single - layer structures type | N-N+, P-N+, P-P+, N-P+ |
| Diameter | 3'', 4'', 5'', 6'' |
| Dopant | Phosphorus, Boron, Arsenic |
| Thickness of layer, mm | (30-120)±10% |
| Epi-layer resistivity Ω*cm | N-type: 0,1-60 P-type: 0,1-30 |
| Stacking fault density, cm-2 | Max 100, typ.10 |