Technical specification
Silicon wafers for electronics:
| Growth method | Dopant | Resisitivity Ω*cm |
Life time μs |
Diameter Inch | Thickness µm | Surface | TTV/ WARP µm |
| Cz | Boron | 0,005-30 | To 100 | 3'' to 6'' | 190-1200 | SSP, DSP | <3/20 |
| Cz | Phosp. | 0,05-30 | To 120 | 3'' to 6'' | 200-675 | SSP, DSP | <3/25 |
| Cz | As | 0,001-0,005 | 4'' to 6'' | 460-675 | SSP, LTO | <3/30 | |
| Cz | Sb | 0,006-0,02 | 3'' to 6'' | 380-65 | SSP, SiO2 | <3/30 | |
| FZ-NTD | Phosp. | 25-100 | To 200 | 3'', 4'' | 500-600 400-500 |
Lapped SSP | <3/30 |