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Prime
and test electronics wafers: (Technical
specification)
- surface as cut 2”,3”, 4”, 5” ,6”and 8”
- lapped 2”,3”,4”,5” and 6”
- polished 2”,3”,4”,5” and 6” (SSP & DSP)
- thin wafers up to 190 micron SSP
Silicon
wafers for solar cells: (Technical
specification)
- round wafers 76, 100 ,125
and 150 mm
- pseudosquare:
- 100x100 mm (125 mm, 135 mm)
- 103x103
mm (135 mm, 144 mm)
- 125x125 mm (150 mm, 165 mm)
- 150x150 mm (195 mm)
Epitaxial
structures: (Technical
specification)
- 76, 100 ,125 and 150 mm up to 100 micron thickness
and 100 W*cm resistivity
High
power bipolar and IGBT transistors, diodes Shottky , triac, diac and thyristors
(Technical specification)